Gastvortrag »Atomic Diffusion Bonding of Wafers« am 07.10.2022 an der EAH Jena

Abstract
Atomic diffusion bonding (ADB) of wafers is a promising process to achieve room-temperature bonding of wafers and substrates. In standard ADB, thin metal films are fabricated on two flat wafer surfaces using sputter deposition, followed by bonding of the two films on the wafers in vacuum. Recently we demonstrated ADB of wafers at room temperature using oxide films. No interface corresponding to the original film surface was observed (Figure 1), indicating high performance of bonding using Y2O3 films. Incident light can pass through transparent wafers bonded with oxide films without reduction in intensity (Figure 2). Moreover, the bonded films show a good electrical insulation. Any mirror-polished wafer (substrate) and any material including polymer can be bonded at room temperature using various oxide films such as Y2O3, ZrO2, and Al2O3. These properties are useful for optical applications (not only in wafer-level fabrications but also in optical parts fabrications) or to produce electrical devices. We present the technical potential and current status of ADB using oxide films.

Der Vortrag findet an der EAH Jena im Hörsaal 5 (Raum 05.03.02) am Freitag, den 7. Oktober 2022 von 11:00 bis 12:00 Uhr statt.